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Journal: Materials, 2022
Volume: 15
Number: 8280
8280
Article: Fabrication of Ga₂O₃ Schottky Barrier Diode and Heterojunction Diode by MOCVD
Authors: by Teng Jiao, Wei Chen, Zhengda Li, Zhaoti Diao, Xinming Dang, Peiran Chen, Xin Dong, Yuantao Zhang and Baolin Zhang
Link: https://www.mdpi.com/1996-1944/15/23/8280

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