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Journal: Materials, 2022
Volume: 15
Number: 457

Article: Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example
Authors: by Zhaoxiang Wei, Hao Fu, Xiaowen Yan, Sheng Li, Long Zhang, Jiaxing Wei, Siyang Liu, Weifeng Sun, Weili Wu and Song Bai
Link: https://www.mdpi.com/1996-1944/15/2/457

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