Kim, D.; Lee, H.; Kim, B.; Baang, S.; Ejderha, K.; Bae, J.-H.; Park, J.
Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance. Materials 2022, 15, 6763.
https://doi.org/10.3390/ma15196763
AMA Style
Kim D, Lee H, Kim B, Baang S, Ejderha K, Bae J-H, Park J.
Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance. Materials. 2022; 15(19):6763.
https://doi.org/10.3390/ma15196763
Chicago/Turabian Style
Kim, Dongwook, Hyeonju Lee, Bokyung Kim, Sungkeun Baang, Kadir Ejderha, Jin-Hyuk Bae, and Jaehoon Park.
2022. "Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance" Materials 15, no. 19: 6763.
https://doi.org/10.3390/ma15196763
APA Style
Kim, D., Lee, H., Kim, B., Baang, S., Ejderha, K., Bae, J.-H., & Park, J.
(2022). Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance. Materials, 15(19), 6763.
https://doi.org/10.3390/ma15196763