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Journal: Materials, 2022
Volume: 15
Number: 5995
Article:
Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs
Authors:
by
Shengnan Zhu, Tianshi Liu, Junchong Fan, Hema Lata Rao Maddi, Marvin H. White and Anant K. Agarwal
Link:
https://www.mdpi.com/1996-1944/15/17/5995
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