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Xu B, Du Y, Wang G, Xiong W, Kong Z, Zhao X, Miao Y, Wang Y, Lin H, Su J, et al. Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate. Materials. 2022; 15(10):3594. https://doi.org/10.3390/ma15103594

Xu, Buqing, Yong Du, Guilei Wang, Wenjuan Xiong, Zhenzhen Kong, Xuewei Zhao, Yuanhao Miao, Yijie Wang, Hongxiao Lin, Jiale Su, and et al. 2022. "Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate" Materials 15, no. 10: 3594. https://doi.org/10.3390/ma15103594

Xu, B., Du, Y., Wang, G., Xiong, W., Kong, Z., Zhao, X., Miao, Y., Wang, Y., Lin, H., Su, J., Li, B., Wu, Y., & Radamson, H. H. (2022). Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate. Materials, 15(10), 3594. https://doi.org/10.3390/ma15103594