Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions
Abstract
:1. Introduction
2. Materials and Methods
3. Results
3.1. Series Resistance
3.2. Recombination Current
3.3. Temperature Behavior
4. Discussion
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Irradiation Fluence (Ion/cm2) | Ideality Factor (n) | Bias Range (Volt) |
---|---|---|
0 | 1.3 | 1.0–1.35 |
1012 | 1.3 | 1.0–1.35 |
6 × 1012 | 2.1 | 1.2–1.4 |
1013 | 2.2 | 1.75–2.3 |
6 × 1013 | 2.1 | 1.85–2.5 |
1014 | 2.2 | 1.9–2.6 |
3 × 1014 | 2.1 | 1.95–2.6 |
1015 | 2.1 | 2.0–2.6 |
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Pellegrino, D.; Calcagno, L.; Zimbone, M.; Di Franco, S.; Sciuto, A. Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions. Materials 2021, 14, 1966. https://doi.org/10.3390/ma14081966
Pellegrino D, Calcagno L, Zimbone M, Di Franco S, Sciuto A. Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions. Materials. 2021; 14(8):1966. https://doi.org/10.3390/ma14081966
Chicago/Turabian StylePellegrino, Domenico, Lucia Calcagno, Massimo Zimbone, Salvatore Di Franco, and Antonella Sciuto. 2021. "Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions" Materials 14, no. 8: 1966. https://doi.org/10.3390/ma14081966