Spassov, D.; Paskaleva, A.; Guziewicz, E.; Davidović, V.; Stanković, S.; Djorić-Veljković, S.; Ivanov, T.; Stanchev, T.; Stojadinović, N.
Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. Materials 2021, 14, 849.
https://doi.org/10.3390/ma14040849
AMA Style
Spassov D, Paskaleva A, Guziewicz E, Davidović V, Stanković S, Djorić-Veljković S, Ivanov T, Stanchev T, Stojadinović N.
Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. Materials. 2021; 14(4):849.
https://doi.org/10.3390/ma14040849
Chicago/Turabian Style
Spassov, Dencho, Albena Paskaleva, Elżbieta Guziewicz, Vojkan Davidović, Srboljub Stanković, Snežana Djorić-Veljković, Tzvetan Ivanov, Todor Stanchev, and Ninoslav Stojadinović.
2021. "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics" Materials 14, no. 4: 849.
https://doi.org/10.3390/ma14040849
APA Style
Spassov, D., Paskaleva, A., Guziewicz, E., Davidović, V., Stanković, S., Djorić-Veljković, S., Ivanov, T., Stanchev, T., & Stojadinović, N.
(2021). Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. Materials, 14(4), 849.
https://doi.org/10.3390/ma14040849