Song, B.; Gao, B.; Han, P.; Yu, Y.; Tang, X.
Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor. Materials 2021, 14, 7532.
https://doi.org/10.3390/ma14247532
AMA Style
Song B, Gao B, Han P, Yu Y, Tang X.
Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor. Materials. 2021; 14(24):7532.
https://doi.org/10.3390/ma14247532
Chicago/Turabian Style
Song, Botao, Bing Gao, Pengfei Han, Yue Yu, and Xia Tang.
2021. "Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor" Materials 14, no. 24: 7532.
https://doi.org/10.3390/ma14247532
APA Style
Song, B., Gao, B., Han, P., Yu, Y., & Tang, X.
(2021). Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor. Materials, 14(24), 7532.
https://doi.org/10.3390/ma14247532