Song, B.;                     Gao, B.;                     Han, P.;                     Yu, Y.;                     Tang, X.    
        Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor. Materials 2021, 14, 7532.
    https://doi.org/10.3390/ma14247532
    AMA Style
    
                                Song B,                                 Gao B,                                 Han P,                                 Yu Y,                                 Tang X.        
                Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor. Materials. 2021; 14(24):7532.
        https://doi.org/10.3390/ma14247532
    
    Chicago/Turabian Style
    
                                Song, Botao,                                 Bing Gao,                                 Pengfei Han,                                 Yue Yu,                                 and Xia Tang.        
                2021. "Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor" Materials 14, no. 24: 7532.
        https://doi.org/10.3390/ma14247532
    
    APA Style
    
                                Song, B.,                                 Gao, B.,                                 Han, P.,                                 Yu, Y.,                                 & Tang, X.        
        
        (2021). Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor. Materials, 14(24), 7532.
        https://doi.org/10.3390/ma14247532