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Journal: Materials, 2021
Volume: 14
Number: 7096
Article:
SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode
Authors:
by
Xiaochuan Deng, Rui Liu, Songjun Li, Ling Li, Hao Wu and Xuan Li
Link:
https://www.mdpi.com/1996-1944/14/22/7096
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