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Journal: Materials, 2021
Volume: 14
Number: 7096

Article: SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode
Authors: by Xiaochuan Deng, Rui Liu, Songjun Li, Ling Li, Hao Wu and Xuan Li
Link: https://www.mdpi.com/1996-1944/14/22/7096

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