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Article

Reduction of Hysteresis in Hybrid Perovskite Transistors by Solvent-Controlled Growth

Department of Information Display, College of Sciences, Kyung Hee University, Seoul 02447, Korea
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Author to whom correspondence should be addressed.
Academic Editors: Jin-Wook Lee and Gill Sang Han
Materials 2021, 14(10), 2573; https://doi.org/10.3390/ma14102573
Received: 31 March 2021 / Revised: 7 May 2021 / Accepted: 13 May 2021 / Published: 15 May 2021
The effect of crystallization process speed on the morphology of solution-processed methyl ammonium lead iodide (MAPbI3) thin films is investigated. Crystallization speed is controlled by varying the number of annealing steps, temperature, and resting time between steps. The resting period allows solvent-controlled growth (SCG) in which crystallization progresses slowly via an intermediate phase—during which solvents slowly evaporate away from the films. SCG results in fewer residues, fewer pinholes, and larger grain sizes. Consequently, thin-film transistors with SCG MAPbI3 exhibit smaller hysteresis in their current-voltage characteristics than those without, demonstrating the benefits of SCG toward hysteresis-free perovskite devices. View Full-Text
Keywords: hybrid perovskite; solvent-controlled growth; hysteresis hybrid perovskite; solvent-controlled growth; hysteresis
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MDPI and ACS Style

Haque, F.; Bukke, R.N.; Mativenga, M. Reduction of Hysteresis in Hybrid Perovskite Transistors by Solvent-Controlled Growth. Materials 2021, 14, 2573. https://doi.org/10.3390/ma14102573

AMA Style

Haque F, Bukke RN, Mativenga M. Reduction of Hysteresis in Hybrid Perovskite Transistors by Solvent-Controlled Growth. Materials. 2021; 14(10):2573. https://doi.org/10.3390/ma14102573

Chicago/Turabian Style

Haque, Farjana, Ravindra N. Bukke, and Mallory Mativenga. 2021. "Reduction of Hysteresis in Hybrid Perovskite Transistors by Solvent-Controlled Growth" Materials 14, no. 10: 2573. https://doi.org/10.3390/ma14102573

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