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Open AccessArticle

Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs

Institute of Physics, Lodz University of Technology, Lodz, Poland
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Materials 2020, 13(6), 1444; https://doi.org/10.3390/ma13061444
Received: 8 January 2020 / Revised: 15 March 2020 / Accepted: 19 March 2020 / Published: 22 March 2020
(This article belongs to the Special Issue Photonic Materials and Devices)
In this paper, we present the results of a computational analysis of continuous-wave (CW) room-temperature (RT) semipolar InGaN/GaN edge-emitting lasers (EELs) operating in the green spectral region. In our calculations, we focused on the most promising materials and design solutions for the cladding layers, in terms of enhancing optical mode confinement. The structural modifications included optimization of top gold metalization, partial replacement of p-type GaN cladding layers with ITO and introducing low refractive index lattice-matched AlInN or plasmonic GaN regions. Based on our numerical findings, we show that by employing new material modifications to green EELs operating at around 540 nm it is possible to decrease their CW RT threshold current densities from over 11 kA/cm2 to less than 7 kA/cm2. View Full-Text
Keywords: edge-emitting lasers; semiconductor devices; InGaN/GaN; numerical simulations edge-emitting lasers; semiconductor devices; InGaN/GaN; numerical simulations
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MDPI and ACS Style

Kuc, M.; Piskorski, Ł.; Dems, M.; Wasiak, M.; Sokół, A.K.; Sarzała, R.P.; Czyszanowski, T. Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs. Materials 2020, 13, 1444.

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