Article Versions Notes

Prucnal S, Żuk J, Hübner R, Duan J, Wang M, Pyszniak K, Drozdziel A, Turek M, Zhou S. Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing. Materials. 2020; 13(6):1408. https://doi.org/10.3390/ma13061408

Prucnal, Slawomir, Jerzy Żuk, René Hübner, Juanmei Duan, Mao Wang, Krzysztof Pyszniak, Andrzej Drozdziel, Marcin Turek, and Shengqiang Zhou. 2020. "Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing" Materials 13, no. 6: 1408. https://doi.org/10.3390/ma13061408

Prucnal, S., Żuk, J., Hübner, R., Duan, J., Wang, M., Pyszniak, K., Drozdziel, A., Turek, M., & Zhou, S. (2020). Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing. Materials, 13(6), 1408. https://doi.org/10.3390/ma13061408