Order Article Reprints

Wang T, Yang Z, Li B, Xu S, Liao Q, Ge F, Zhang T, Li J. Lattice Defects and Exfoliation Efficiency of 6H-SiC via H₂⁺ Implantation at Elevated Temperature. Materials. 2020; 13(24):5723. https://doi.org/10.3390/ma13245723

Wang, Tao, Zhen Yang, Bingsheng Li, Shuai Xu, Qing Liao, Fangfang Ge, Tongmin Zhang, and Jun Li. 2020. "Lattice Defects and Exfoliation Efficiency of 6H-SiC via H₂⁺ Implantation at Elevated Temperature" Materials 13, no. 24: 5723. https://doi.org/10.3390/ma13245723

Wang, T., Yang, Z., Li, B., Xu, S., Liao, Q., Ge, F., Zhang, T., & Li, J. (2020). Lattice Defects and Exfoliation Efficiency of 6H-SiC via H₂⁺ Implantation at Elevated Temperature. Materials, 13(24), 5723. https://doi.org/10.3390/ma13245723