Next Article in Journal
The Correlation of Temperature-Mineral Phase Transformation as a Controlling Factor of Thermal and Mechanical Performance of Fly Ash-Based Alkali-Activated Binders
Next Article in Special Issue
Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer
Previous Article in Journal
Influence of Alloying Elements on the Dynamic Recrystallization of 4 wt.–% Medium Manganese Steels
Previous Article in Special Issue
Effect of Carbon Addition and Mixture Method on the Microstructure and Mechanical Properties of Silicon Carbide
Article

Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, West Youyi Rd, No. 127, Xi’an 710072, China
*
Author to whom correspondence should be addressed.
Materials 2020, 13(22), 5179; https://doi.org/10.3390/ma13225179
Received: 19 October 2020 / Revised: 9 November 2020 / Accepted: 10 November 2020 / Published: 17 November 2020
(This article belongs to the Special Issue Silicon Carbide: From Fundamentals to Applications)
We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000 °C. The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires. View Full-Text
Keywords: silicon carbide nanowires; vapor-solid-liquid mechanism; oxide-assisted growth mechanism; photoluminescence; thermal stability silicon carbide nanowires; vapor-solid-liquid mechanism; oxide-assisted growth mechanism; photoluminescence; thermal stability
Show Figures

Figure 1

MDPI and ACS Style

Guo, C.; Cheng, L.; Ye, F.; Zhang, Q. Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control. Materials 2020, 13, 5179. https://doi.org/10.3390/ma13225179

AMA Style

Guo C, Cheng L, Ye F, Zhang Q. Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control. Materials. 2020; 13(22):5179. https://doi.org/10.3390/ma13225179

Chicago/Turabian Style

Guo, Chuchu, Laifei Cheng, Fang Ye, and Qing Zhang. 2020. "Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control" Materials 13, no. 22: 5179. https://doi.org/10.3390/ma13225179

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop