Next Article in Journal
Effect of Solid Waste-Petroleum Coke Residue on the Hydration Reaction and Property of Concrete
Previous Article in Journal
Microstructure-Based Relative Humidity in Cementitious System Due to Self-Desiccation
Previous Article in Special Issue
Visual Appearance of Nanocrystal-Based Luminescent Solar Concentrators
Article Menu

Export Article

Open AccessArticle
Materials 2019, 12(8), 1215; https://doi.org/10.3390/ma12081215

A Novel Phototransistor Device with Dual Active Layers Composited of CsPbBr3 and ZnO Quantum Dots

1
Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
2
College of Electronic Science and Technology, Shenzhen University, Shenzhen 518061, China
*
Author to whom correspondence should be addressed.
Received: 14 March 2019 / Revised: 10 April 2019 / Accepted: 11 April 2019 / Published: 13 April 2019
(This article belongs to the Special Issue Quantum Dots and Applications)
  |  
PDF [5006 KB, uploaded 13 April 2019]
  |  

Abstract

Taking advantage of a large light absorption coefficient, long charge carrier diffusion length and low-cost solution processing, all-inorganic halides perovskite CsPbBr3 quantum dots (QDs) are combined with a ZnO QD film to construct a high-performance photodetector. In this work, a novel photodetector device based on transistor structure with dual active layers composed of CsPbBr3 and ZnO film is proposed. In this structure, CsPbBr3 film functions as the light-absorbing layer and ZnO film acts as the conducting layer. Owing to the high electron mobility and hole-blocking nature of the ZnO QDs film, the photo-induced electron-hole pairs can be separated efficiently. As a result, the device exhibits high performance with response of 43.5 A/W, high detection up to 5.02 × 1011 Jones and on/off ratio of 5.6 × 104 under 365 nm light illumination. Compared with the ZnO-only phototransistor (the photodetector with the structure of transistor) the performance of the CsPbBr3 phototransistor showed significant improvement, which is superior to the majority of photodetectors prepared by perovskite. This work demonstrates that the ZnO QDs film can be applied in the photodetector device as a functional conducting layer, and we believe that the hybrid CsPbBr3/ZnO phototransistor would promote the development of low-cost and high-performance photodetectors. View Full-Text
Keywords: all inorganic perovskite quantum dots; ZnO QDs film; photodetector; transistor structure all inorganic perovskite quantum dots; ZnO QDs film; photodetector; transistor structure
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Zhang, X.; Li, Q.; Yan, S.; Lei, W.; Chen, J.; Qasim, K. A Novel Phototransistor Device with Dual Active Layers Composited of CsPbBr3 and ZnO Quantum Dots. Materials 2019, 12, 1215.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top