Next Article in Journal
Effect of Solid Waste-Petroleum Coke Residue on the Hydration Reaction and Property of Concrete
Next Article in Special Issue
Emission Enhancement of Cu-Doped InP Quantum Dots through Double Shelling Scheme
Previous Article in Journal
Microstructure-Based Relative Humidity in Cementitious System Due to Self-Desiccation
Previous Article in Special Issue
Visual Appearance of Nanocrystal-Based Luminescent Solar Concentrators
Open AccessArticle

A Novel Phototransistor Device with Dual Active Layers Composited of CsPbBr3 and ZnO Quantum Dots

1
Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
2
College of Electronic Science and Technology, Shenzhen University, Shenzhen 518061, China
*
Author to whom correspondence should be addressed.
Materials 2019, 12(8), 1215; https://doi.org/10.3390/ma12081215
Received: 14 March 2019 / Revised: 10 April 2019 / Accepted: 11 April 2019 / Published: 13 April 2019
(This article belongs to the Special Issue Quantum Dots and Applications)
Taking advantage of a large light absorption coefficient, long charge carrier diffusion length and low-cost solution processing, all-inorganic halides perovskite CsPbBr3 quantum dots (QDs) are combined with a ZnO QD film to construct a high-performance photodetector. In this work, a novel photodetector device based on transistor structure with dual active layers composed of CsPbBr3 and ZnO film is proposed. In this structure, CsPbBr3 film functions as the light-absorbing layer and ZnO film acts as the conducting layer. Owing to the high electron mobility and hole-blocking nature of the ZnO QDs film, the photo-induced electron-hole pairs can be separated efficiently. As a result, the device exhibits high performance with response of 43.5 A/W, high detection up to 5.02 × 1011 Jones and on/off ratio of 5.6 × 104 under 365 nm light illumination. Compared with the ZnO-only phototransistor (the photodetector with the structure of transistor) the performance of the CsPbBr3 phototransistor showed significant improvement, which is superior to the majority of photodetectors prepared by perovskite. This work demonstrates that the ZnO QDs film can be applied in the photodetector device as a functional conducting layer, and we believe that the hybrid CsPbBr3/ZnO phototransistor would promote the development of low-cost and high-performance photodetectors. View Full-Text
Keywords: all inorganic perovskite quantum dots; ZnO QDs film; photodetector; transistor structure all inorganic perovskite quantum dots; ZnO QDs film; photodetector; transistor structure
Show Figures

Figure 1

MDPI and ACS Style

Zhang, X.; Li, Q.; Yan, S.; Lei, W.; Chen, J.; Qasim, K. A Novel Phototransistor Device with Dual Active Layers Composited of CsPbBr3 and ZnO Quantum Dots. Materials 2019, 12, 1215.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop