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Materials 2019, 12(7), 1169; https://doi.org/10.3390/ma12071169

Toward a Fully Analytical Contact Resistance Expression in Organic Transistors

1
Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea
2
LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France
*
Author to whom correspondence should be addressed.
Received: 7 March 2019 / Revised: 8 April 2019 / Accepted: 9 April 2019 / Published: 10 April 2019
(This article belongs to the Section Optics and Photonics)
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PDF [1307 KB, uploaded 10 April 2019]
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Abstract

Contact resistance is a major characteristic of organic transistors, and its importance has received renewed attention due to the recent revelation of mobility overestimation. In this article, we propose a method to describe the contact resistance as a closed-form compact equation of the materials, interfaces, and geometrical parameters. The proposed model allows us to quantitatively understand the correlation between charge-injection and transport properties, while providing a tool for performance prediction and optimization. This theory is applied to a set of experimentally fabricated devices to exemplify how to utilize the model in practice. View Full-Text
Keywords: organic field-effect transistors; contact resistance; device physics organic field-effect transistors; contact resistance; device physics
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Kim, C.-H.; Horowitz, G. Toward a Fully Analytical Contact Resistance Expression in Organic Transistors. Materials 2019, 12, 1169.

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