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Materials 2019, 12(7), 1169;

Toward a Fully Analytical Contact Resistance Expression in Organic Transistors

Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea
LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France
Author to whom correspondence should be addressed.
Received: 7 March 2019 / Revised: 8 April 2019 / Accepted: 9 April 2019 / Published: 10 April 2019
(This article belongs to the Section Optics and Photonics)
PDF [1307 KB, uploaded 10 April 2019]


Contact resistance is a major characteristic of organic transistors, and its importance has received renewed attention due to the recent revelation of mobility overestimation. In this article, we propose a method to describe the contact resistance as a closed-form compact equation of the materials, interfaces, and geometrical parameters. The proposed model allows us to quantitatively understand the correlation between charge-injection and transport properties, while providing a tool for performance prediction and optimization. This theory is applied to a set of experimentally fabricated devices to exemplify how to utilize the model in practice. View Full-Text
Keywords: organic field-effect transistors; contact resistance; device physics organic field-effect transistors; contact resistance; device physics

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Kim, C.-H.; Horowitz, G. Toward a Fully Analytical Contact Resistance Expression in Organic Transistors. Materials 2019, 12, 1169.

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