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Journal: Materials, 2019
Volume: 12
Number: 737

Article: Impact of Oxygen Vacancy on the Photo-Electrical Properties of In2O3-Based Thin-Film Transistor by Doping Ga
Authors: by Kuan-Yu Chen, Chih-Chiang Yang, Yan-Kuin Su, Zi-Hao Wang and Hsin-Chieh Yu
Link: https://www.mdpi.com/1996-1944/12/5/737

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