Seppänen, H.; Kim, I.; Etula, J.; Ubyivovk, E.; Bouravleuv, A.; Lipsanen, H.
Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition. Materials 2019, 12, 406.
https://doi.org/10.3390/ma12030406
AMA Style
Seppänen H, Kim I, Etula J, Ubyivovk E, Bouravleuv A, Lipsanen H.
Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition. Materials. 2019; 12(3):406.
https://doi.org/10.3390/ma12030406
Chicago/Turabian Style
Seppänen, Heli, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexei Bouravleuv, and Harri Lipsanen.
2019. "Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition" Materials 12, no. 3: 406.
https://doi.org/10.3390/ma12030406
APA Style
Seppänen, H., Kim, I., Etula, J., Ubyivovk, E., Bouravleuv, A., & Lipsanen, H.
(2019). Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition. Materials, 12(3), 406.
https://doi.org/10.3390/ma12030406