Next Article in Journal
Oil Leakage Evaluation for Selection of Emulsion-Based Non-Curable Synthetic Polymer Rubberized Gel (ENC-SPRG) as Waterproofing Material in Underground Structures
Previous Article in Journal
Performance Degradation of Large-Sized Asphalt Mixture Specimen under Heavy Load and Its Affecting Factors Using Multifunctional Pavement Material Tester
Communication

Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations

1
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
2
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
*
Author to whom correspondence should be addressed.
Materials 2019, 12(23), 3815; https://doi.org/10.3390/ma12233815
Received: 29 October 2019 / Revised: 14 November 2019 / Accepted: 18 November 2019 / Published: 20 November 2019
(This article belongs to the Section Electronic Materials)
Numerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based complementary logic circuits that are based on two-dimensional (2D) planar structures. However, there are fundamental limits to the 2D planar structured complementary logic circuits, such as a large dimension and a large parasitic resistance. This work demonstrated a vertically stacked three-dimensional complementary inverter composed of a p-channel tin monoxide (SnO) TFT and an n-channel indium-gallium-zinc oxide (IGZO) TFT. A bottom-gate p-channel SnO TFT was formed on the top-gate n-channel IGZO TFT with a shared common gate electrode. The fabricated vertically stacked complementary inverter exhibited full swing characteristics with a voltage gain of ~33.6, a high noise margin of 3.13 V, and a low noise margin of 3.16 V at a supplied voltage of 10 V. The achieved voltage gain of the fabricated complementary inverter was higher than that of the vertically stacked complementary inverters composed of other oxide TFTs in previous works. In addition, we showed that the vertically stacked complementary inverter exhibited excellent visible-light photoresponse. This indicates that the oxide TFT-based vertically stacked complementary inverter can be used as a sensitive photo-sensor operating in the visible spectral range with the voltage read-out scheme. View Full-Text
Keywords: oxide TFT; vertically stacked complementary logic inverter; SnO; IGZO; photo-sensor oxide TFT; vertically stacked complementary logic inverter; SnO; IGZO; photo-sensor
Show Figures

Figure 1

MDPI and ACS Style

Joo, H.-J.; Shin, M.-G.; Jung, H.-S.; Cha, H.-S.; Nam, D.; Kwon, H.-I. Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations. Materials 2019, 12, 3815. https://doi.org/10.3390/ma12233815

AMA Style

Joo H-J, Shin M-G, Jung H-S, Cha H-S, Nam D, Kwon H-I. Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations. Materials. 2019; 12(23):3815. https://doi.org/10.3390/ma12233815

Chicago/Turabian Style

Joo, Hyo-Jun, Min-Gyu Shin, Hwan-Seok Jung, Hyun-Seok Cha, Donguk Nam, and Hyuck-In Kwon. 2019. "Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations" Materials 12, no. 23: 3815. https://doi.org/10.3390/ma12233815

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop