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Journal: Materials, 2019
Volume: 12
Number: 3795

Article: Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD
Authors: by Marta Chrostowski, José Alvarez, Alessia Le Donne, Simona Binetti and Pere Roca i Cabarrocas
Link: https://www.mdpi.com/1996-1944/12/22/3795

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