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Journal: Materials, 2019
Volume: 12
Number: 3795
Article:
Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD
Authors:
by
Marta Chrostowski, José Alvarez, Alessia Le Donne, Simona Binetti and Pere Roca i Cabarrocas
Link:
https://www.mdpi.com/1996-1944/12/22/3795
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