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Materials 2019, 12(2), 254; https://doi.org/10.3390/ma12020254

Epitaxial Growth of Orthorhombic GaFeO3 Thin Films on SrTiO3 (111) Substrates by Simple Sol-Gel Method

1
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
2
Laboratory for Materials and Structures, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan
3
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
4
Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
*
Authors to whom correspondence should be addressed.
Received: 17 November 2018 / Revised: 6 January 2019 / Accepted: 8 January 2019 / Published: 14 January 2019
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Abstract

A Sol-gel method assisted with spin-coating has been successfully used to grow orthorhombic GaFeO3 epitaxial films on SrTiO3 (111) substrates for the first time. The film with Pna21 crystal structure has been grown along the c-axis. The rocking curve of (004) reflection shows that the Full-Width at Half-Maximum (FWHM) value could be determined to be 0.230°, indicating good single crystallinity and high quality. X-ray Φ scan reveals a three-fold symmetry of the substrate and a six-fold symmetry of the film, respectively. The in-plane domains rotate 60° from each other in the film. Uniform film with dense structure, columnar grains with similar grain size was obtained. The thickness of the film was evaluated to be ~170 nm. The roughness value (RMS) measured by AFM was 4.5 nm, revealing a flat film. The in-plane Magnetization versus Magnetic field (M-H) curve at 5 K performs a typical ferri- or ferromagnetic hysteresis loop with a saturated magnetization (Ms) value of 136 emu/cm3. The Curie temperature could be determined to be 174 K. Compared to Pulsed Laser Deposition (PLD), the sol-gel method can prepare large area films with low cost. These new films show promising applications in multiferroic devices. View Full-Text
Keywords: GaFeO3 film; epitaxial growth; sol-gel method; multi-domain structure; magnetic property GaFeO3 film; epitaxial growth; sol-gel method; multi-domain structure; magnetic property
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Zhang, M.; Yasui, S.; Katayama, T.; Rao, B.N.; Wen, H.; Pan, X.; Tang, M.; Ai, F.; Itoh, M. Epitaxial Growth of Orthorhombic GaFeO3 Thin Films on SrTiO3 (111) Substrates by Simple Sol-Gel Method. Materials 2019, 12, 254.

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