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Materials 2019, 12(2), 198;

Structure and Properties of Single-Layer MoS2 for Nano-Photoelectric Devices

School of Mechanical Engineering, Northwestern Polytechnical University, Xi’an 710072, China
School of Materials Science and Chemical Engineering, Xi’an Technological University, Xi’an 710021, China
Author to whom correspondence should be addressed.
Received: 9 December 2018 / Revised: 29 December 2018 / Accepted: 2 January 2019 / Published: 9 January 2019
(This article belongs to the Special Issue Selected Papers from TIKI ICICE 2018)
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To meet the need for preparing high-performance nano-optoelectronic devices based on single-layer MoS2, the effects of the heating method (one-step or two-step heating) and the temperature of the MoO3 source on the morphology, size, structure, and layers of an MoS2 crystal grown on a sapphire substrate using chemical vapor deposition are studied in this paper. The results show that MoS2 prepared by two-step heating (the heating of the S source starts when the temperature of the MoO3 source rises to 837 K) is superior over that of one-step heating (MoO3 and S are heated at the same time). One-step heating tends to form a mixture of MoO2 and MoS2. Neither too low nor too high of a heating temperature of MoO3 source is conducive to the formation of MoS2. When the temperature of MoO3 source is in the range of 1073 K to 1098 K, the size of MoS2 increases with the rise in temperature. A uniform large-sized triangle with a side length of 100 μm is obtained when the heating temperature of MoO3 is 1098 K. The triangular MoS2 crystals grown by the two-step heating method have a single-layer structure. View Full-Text
Keywords: single-layer MoS2; chemical vapor deposition; heating method; heating temperature single-layer MoS2; chemical vapor deposition; heating method; heating temperature

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Jian, J.; Chang, H.; Xu, T. Structure and Properties of Single-Layer MoS2 for Nano-Photoelectric Devices. Materials 2019, 12, 198.

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