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Materials 2019, 12(2), 198; https://doi.org/10.3390/ma12020198

Structure and Properties of Single-Layer MoS2 for Nano-Photoelectric Devices

1
School of Mechanical Engineering, Northwestern Polytechnical University, Xi’an 710072, China
2
School of Materials Science and Chemical Engineering, Xi’an Technological University, Xi’an 710021, China
*
Author to whom correspondence should be addressed.
Received: 9 December 2018 / Revised: 29 December 2018 / Accepted: 2 January 2019 / Published: 9 January 2019
(This article belongs to the Special Issue Selected Papers from TIKI ICICE 2018)
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Abstract

To meet the need for preparing high-performance nano-optoelectronic devices based on single-layer MoS2, the effects of the heating method (one-step or two-step heating) and the temperature of the MoO3 source on the morphology, size, structure, and layers of an MoS2 crystal grown on a sapphire substrate using chemical vapor deposition are studied in this paper. The results show that MoS2 prepared by two-step heating (the heating of the S source starts when the temperature of the MoO3 source rises to 837 K) is superior over that of one-step heating (MoO3 and S are heated at the same time). One-step heating tends to form a mixture of MoO2 and MoS2. Neither too low nor too high of a heating temperature of MoO3 source is conducive to the formation of MoS2. When the temperature of MoO3 source is in the range of 1073 K to 1098 K, the size of MoS2 increases with the rise in temperature. A uniform large-sized triangle with a side length of 100 μm is obtained when the heating temperature of MoO3 is 1098 K. The triangular MoS2 crystals grown by the two-step heating method have a single-layer structure. View Full-Text
Keywords: single-layer MoS2; chemical vapor deposition; heating method; heating temperature single-layer MoS2; chemical vapor deposition; heating method; heating temperature
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Jian, J.; Chang, H.; Xu, T. Structure and Properties of Single-Layer MoS2 for Nano-Photoelectric Devices. Materials 2019, 12, 198.

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