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Open AccessArticle

High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application

1
Key Laboratory of Wide-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
2
Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University, Guangzhou 510632, China
3
Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
4
School of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China
5
Yunnan Key Laboratory of Opto-electronic Information Technology, Kunming 650500, China
*
Author to whom correspondence should be addressed.
Materials 2019, 12(17), 2662; https://doi.org/10.3390/ma12172662
Received: 24 July 2019 / Revised: 17 August 2019 / Accepted: 19 August 2019 / Published: 21 August 2019
(This article belongs to the Special Issue Sputtering Technologies for Growth of Advanced Thin Film)
In this paper, a high-quality sputtered-GeSn layer on Ge (100) with a Sn composition up to 7% was demonstrated. The crystallinity of the GeSn layer was investigated via high-resolution X-ray diffraction (HR-XRD) and the strain relaxation degree of the GeSn layer was evaluated to be approximately 50%. A novel method was also proposed to evaluate the averaged threading dislocation densities (TDDs) in the GeSn layer, which was obtained from the rocking curve of GeSn layer along the (004) plane. The photoluminescence (PL) measurement result shows the significant optical emission (1870 nm) from the deposited high-quality GeSn layer. To verify whether our deposited GeSn can be used for optoelectronic devices, we fabricated the simple vertical p-i-n diode, and the room temperature current–voltage (I–V) characteristic was obtained. Our work paves the way for future sputtered-GeSn optimization, which is critical for optoelectronic applications. View Full-Text
Keywords: GeSn layer; averaged TDD; magnetron sputtering; p-i-n diode GeSn layer; averaged TDD; magnetron sputtering; p-i-n diode
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MDPI and ACS Style

Yang, J.; Hu, H.; Miao, Y.; Dong, L.; Wang, B.; Wang, W.; Su, H.; Xuan, R.; Zhang, H. High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application. Materials 2019, 12, 2662.

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