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One-Volt, Solution-Processed Organic Transistors with Self-Assembled Monolayer-Ta2O5 Gate Dielectrics

1
School of Electrical and Electronic Engineering, University of Manchester, Sackville Street, Manchester M13 9PL, UK
2
School of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, UK
3
School of Physics, Indian Institute of Science Education and Research, Thiruvananthapuram, Kerala 695551, India
*
Author to whom correspondence should be addressed.
Materials 2019, 12(16), 2563; https://doi.org/10.3390/ma12162563
Received: 11 July 2019 / Revised: 7 August 2019 / Accepted: 8 August 2019 / Published: 12 August 2019
(This article belongs to the Special Issue Organic Transistors: Current Status and Opportunities)
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Abstract

Low-voltage, solution-processed organic thin-film transistors (OTFTs) have tremendous potential to be key components in low-cost, flexible and large-area electronics. However, for these devices to operate at low voltage, robust and high capacitance gate dielectrics are urgently needed. Herein, the fabrication of OTFTs that operate at 1 V is reported. These devices comprise a solution-processed, self-assembled monolayer (SAM) modified tantalum pentoxide (Ta2O5) as the gate dielectric. The morphology and dielectric properties of the anodized Ta2O5 films with and without n-octadecyltrichlorosilane (OTS) SAM treatment have been studied. The thickness of the Ta2O5 film was optimized by varying the anodization voltage. The results show that organic TFTs gated with OTS-modified tantalum pentoxide anodized at 3 V (d ~7 nm) exhibit the best performance. The devices operate at 1 V with a saturation field-effect mobility larger than 0.2 cm2 V−1 s−1, threshold voltage −0.55 V, subthreshold swing 120 mV/dec, and current on/off ratio in excess of 5 × 103. As a result, the demonstrated OTFTs display a promising performance for applications in low-voltage, portable electronics. View Full-Text
Keywords: organic thin-film transistor (OTFT); one-volt operation; tantalum oxide; anodization; self-assembled monolayer (SAM) modification organic thin-film transistor (OTFT); one-volt operation; tantalum oxide; anodization; self-assembled monolayer (SAM) modification
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Mohammadian, N.; Faraji, S.; Sagar, S.; Das, B.C.; Turner, M.L.; Majewski, L.A. One-Volt, Solution-Processed Organic Transistors with Self-Assembled Monolayer-Ta2O5 Gate Dielectrics. Materials 2019, 12, 2563.

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