Deyu, G.K.; Hunka, J.; Roussel, H.; Brötz, J.; Bellet, D.; Klein, A.
Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping. Materials 2019, 12, 2232.
https://doi.org/10.3390/ma12142232
AMA Style
Deyu GK, Hunka J, Roussel H, Brötz J, Bellet D, Klein A.
Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping. Materials. 2019; 12(14):2232.
https://doi.org/10.3390/ma12142232
Chicago/Turabian Style
Deyu, Getnet Kacha, Jonas Hunka, Hervé Roussel, Joachim Brötz, Daniel Bellet, and Andreas Klein.
2019. "Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping" Materials 12, no. 14: 2232.
https://doi.org/10.3390/ma12142232
APA Style
Deyu, G. K., Hunka, J., Roussel, H., Brötz, J., Bellet, D., & Klein, A.
(2019). Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping. Materials, 12(14), 2232.
https://doi.org/10.3390/ma12142232