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Open AccessArticle

Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors

Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK
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Materials 2018, 11(9), 1487; https://doi.org/10.3390/ma11091487
Received: 6 July 2018 / Revised: 14 August 2018 / Accepted: 16 August 2018 / Published: 21 August 2018
(This article belongs to the Special Issue III-Nitrides Semiconductor Research in the UK and Ireland)
Utilising dislocation-related vertical etching channels in gallium nitride, we have previously demonstrated a simple electrochemical etching (ECE) process that can create layered porous GaN structures to form distributed Bragg reflectors for visible light at wafer scale. Here, we apply the same ECE process to realise AlGaN-based ultraviolet distributed Bragg reflectors (DBRs). These are of interest because they could provide a pathway to non-absorbing UV reflectors to enhance the performance of UV LEDs, which currently have extremely low efficiency. We have demonstrated porous AlGaN-based UV DBRs with a peak reflectance of 89% at 324 nm. The uniformity of these devices is currently low, as the as-grown material has a high density of V-pits and these alter the etching process. However, our results indicate that if the material growth is optimised, the ECE process will be useful for the fabrication of UV reflectors. View Full-Text
Keywords: nitride; porous; electrochemistry nitride; porous; electrochemistry
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  • Externally hosted supplementary file 1
    Doi: https://doi.org/10.17863/CAM.26245
    Description: This publication is supported by multiple datasets, which are openly available here: https://doi.org/10.17863/CAM.26245.
MDPI and ACS Style

Griffin, P.; Zhu, T.; Oliver, R. Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors. Materials 2018, 11, 1487.

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