The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

Zheng, Weifeng; Chen, Yue; Peng, Xihong; Zhong, Kehua; Lin, Yingbin; Huang, Zhigao

doi:10.3390/ma11071253

Open AccessArticle

The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

by

Weifeng Zheng

^1,2,

Yue Chen

^1,2,*,

Xihong Peng

^1,2,

Kehua Zhong

^1,2,

Yingbin Lin

^1,2 and

Zhigao Huang

^1,3,*

¹

Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, China

²

Fujian Provincial Engineering Technical Research Centre of Solar-Energy Conversion and Stored Energy, Fuzhou 350117, China

³

Fujian Provincial Collaborative Innovation Center for Optoelectronic, Semiconductors and Efficient Devices, Xiamen 361005, China

^*

Authors to whom correspondence should be addressed.

Materials 2018, 11(7), 1253; https://doi.org/10.3390/ma11071253

Submission received: 29 May 2018 / Accepted: 12 July 2018 / Published: 20 July 2018

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Abstract

P-type binary copper oxide semiconductor films for various O₂ flow rates and total pressures (P_t) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu₂O, Cu₄O₃, CuO, and their mixture was established. Moreover, based on Kelvin Probe Force Microscopy (KPFM) and conductive AFM (C-AFM), by measuring the contact potential difference (V_CPD) and the field emission property, the work function and the carrier concentration were obtained, which can be used to distinguish the different types of copper oxide states. The band gaps of the Cu₂O, Cu₄O₃, and CuO thin films were observed to be (2.51 ± 0.02) eV, (1.65 ± 0.1) eV, and (1.42 ± 0.01) eV, respectively. The resistivities of Cu₂O, Cu₄O₃, and CuO thin films are (3.7 ± 0.3) × 10³ Ω·cm, (1.1 ± 0.3) × 10³ Ω·cm, and (1.6 ± 6) × 10¹ Ω·cm, respectively. All the measured results above are consistent.

Keywords: binary copper oxide; phase structure; band gap; contact potential difference

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MDPI and ACS Style

Zheng, W.; Chen, Y.; Peng, X.; Zhong, K.; Lin, Y.; Huang, Z. The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering. Materials 2018, 11, 1253. https://doi.org/10.3390/ma11071253

AMA Style

Zheng W, Chen Y, Peng X, Zhong K, Lin Y, Huang Z. The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering. Materials. 2018; 11(7):1253. https://doi.org/10.3390/ma11071253

Chicago/Turabian Style

Zheng, Weifeng, Yue Chen, Xihong Peng, Kehua Zhong, Yingbin Lin, and Zhigao Huang. 2018. "The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering" Materials 11, no. 7: 1253. https://doi.org/10.3390/ma11071253

APA Style

Zheng, W., Chen, Y., Peng, X., Zhong, K., Lin, Y., & Huang, Z. (2018). The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering. Materials, 11(7), 1253. https://doi.org/10.3390/ma11071253

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The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

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