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Cheng TS, Summerfield A, Mellor CJ, Khlobystov AN, Eaves L, Foxon CT, Beton PH, Novikov SV. High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes. Materials. 2018; 11(7):1119. https://doi.org/10.3390/ma11071119

Cheng, Tin S., Alex Summerfield, Christopher J. Mellor, Andrei N. Khlobystov, Laurence Eaves, C. Thomas Foxon, Peter H. Beton, and Sergei V. Novikov. 2018. "High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes" Materials 11, no. 7: 1119. https://doi.org/10.3390/ma11071119

Cheng, T. S., Summerfield, A., Mellor, C. J., Khlobystov, A. N., Eaves, L., Foxon, C. T., Beton, P. H., & Novikov, S. V. (2018). High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes. Materials, 11(7), 1119. https://doi.org/10.3390/ma11071119