Cheng, T.S.; Summerfield, A.; Mellor, C.J.; Khlobystov, A.N.; Eaves, L.; Foxon, C.T.; Beton, P.H.; Novikov, S.V.
High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes. Materials 2018, 11, 1119.
https://doi.org/10.3390/ma11071119
AMA Style
Cheng TS, Summerfield A, Mellor CJ, Khlobystov AN, Eaves L, Foxon CT, Beton PH, Novikov SV.
High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes. Materials. 2018; 11(7):1119.
https://doi.org/10.3390/ma11071119
Chicago/Turabian Style
Cheng, Tin S., Alex Summerfield, Christopher J. Mellor, Andrei N. Khlobystov, Laurence Eaves, C. Thomas Foxon, Peter H. Beton, and Sergei V. Novikov.
2018. "High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes" Materials 11, no. 7: 1119.
https://doi.org/10.3390/ma11071119
APA Style
Cheng, T. S., Summerfield, A., Mellor, C. J., Khlobystov, A. N., Eaves, L., Foxon, C. T., Beton, P. H., & Novikov, S. V.
(2018). High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes. Materials, 11(7), 1119.
https://doi.org/10.3390/ma11071119