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Materials 2018, 11(6), 944; https://doi.org/10.3390/ma11060944

Effect of Alpha-Particle Irradiation on InGaP/GaAs/Ge Triple-Junction Solar Cells

1
Department of Physics, Yantai University, 30 Qingquan Road, Laishan District, Yantai 264005, China
2
Shanghai Institute of Space Power-Sources, 2965 Dongchuan Road, Minhang District, Shanghai 200233, China
*
Author to whom correspondence should be addressed.
Received: 6 May 2018 / Revised: 31 May 2018 / Accepted: 31 May 2018 / Published: 4 June 2018
(This article belongs to the Section Energy Materials)
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Abstract

InGaP/GaAs/Ge triple-junction solar cells were irradiated with 5.1 MeV alpha particles with different fluences. The degradations of the optical and electrical properties of InGaP/GaAs/Ge solar cells were described in terms of the variation in the short-circuit current (Isc), the open-circuit voltage (Voc), the maximum power (Pmax), the spectral response (SR), and the photoluminescence (PL) versus the 5.1 MeV alpha-particle fluences. The degradation modeling of the Isc and Voc under 1 MeV, 3 MeV, and 5.1 MeV alpha-particle irradiation was performed by calculating the introduction rate of non-radiative recombination centers, and the minority-carrier capture cross section, and the results were in good agreement with experimental data. For comparison, the degradations of the Isc and Voc were presented under 1 MeV and 3 MeV proton irradiation. View Full-Text
Keywords: InGaP/GaAs/Ge solar cells; alpha-particle irradiation; current–voltage (I–V) characteristics; spectral response; photoluminescence; degradation InGaP/GaAs/Ge solar cells; alpha-particle irradiation; current–voltage (I–V) characteristics; spectral response; photoluminescence; degradation
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Xu, J.; Guo, M.; Lu, M.; He, H.; Yang, G.; Xu, J. Effect of Alpha-Particle Irradiation on InGaP/GaAs/Ge Triple-Junction Solar Cells. Materials 2018, 11, 944.

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