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Open AccessArticle

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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Materials 2018, 11(3), 430; https://doi.org/10.3390/ma11030430
Received: 4 February 2018 / Revised: 12 March 2018 / Accepted: 13 March 2018 / Published: 15 March 2018
Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-performance devices with the gate length at 5 nm and below by solving the quantum transport equation self-constantly with the Poisson equation. We find that out of the 14 compounds, MoS2, MoSe2, and MoTe2 may be used in the devices to achieve a good subthreshold swing and a reasonable current ON-OFF ratio and delay. Our work points out the direction of further device optimization for experiments. View Full-Text
Keywords: 2-D materials; monolayer transition metal dichalcogenide FETs; junctionless FETs 2-D materials; monolayer transition metal dichalcogenide FETs; junctionless FETs
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Peng, B.; Zheng, W.; Qin, J.; Zhang, W. Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors. Materials 2018, 11, 430.

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