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Wu C-C, You H-C, Lin Y-H, Yang C-J, Hsiao Y-P, Liao T-P, Yang W-L. Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique. Materials. 2018; 11(2):265. https://doi.org/10.3390/ma11020265

Wu, Chi-Chang, Hsin-Chiang You, Yu-Hsien Lin, Chia-Jung Yang, Yu-Ping Hsiao, Tun-Po Liao, and Wen-Luh Yang. 2018. "Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique" Materials 11, no. 2: 265. https://doi.org/10.3390/ma11020265

Wu, C.-C., You, H.-C., Lin, Y.-H., Yang, C.-J., Hsiao, Y.-P., Liao, T.-P., & Yang, W.-L. (2018). Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique. Materials, 11(2), 265. https://doi.org/10.3390/ma11020265