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Radiation Resistance of the U(Al, Si)3 Alloy: Ion-Induced Disordering

Department of Materials Engineering, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 8410501, Israel
Nuclear Physics Institute, Academy of Sciences of the Czech Republic, Hlavni 130, Husinec-Rez 68250, Czech Republic
South-Ukrainian National Pedagogical University after K. D. Ushinskij, Odessa 65000, Ukraine
Nuclear Research Center-Negev, P.O. Box 9001, Beer-Sheva 8419001, Israel
Author to whom correspondence should be addressed.
Materials 2018, 11(2), 228;
Received: 17 January 2018 / Revised: 28 January 2018 / Accepted: 31 January 2018 / Published: 2 February 2018
(This article belongs to the Special Issue Intermetallic Alloys: Fabrication, Properties and Applications 2017)
During the exploitation of nuclear reactors, various U-Al based ternary intermetallides are formed in the fuel-cladding interaction layer. Structure and physical properties of these intermetallides determine the radiation resistance of cladding and, ultimately, the reliability and lifetime of the nuclear reactor. In current research, U(Al, Si)3 composition was studied as a potential constituent of an interaction layer. Phase content of the alloy of an interest was ordered U(Al, Si)3, structure of which was reported earlier, and pure Al (constituting less than 20 vol % of the alloy). This alloy was investigated prior and after the irradiation performed by Ar ions at 30 keV. The irradiation was performed on the transmission electron microscopy (TEM, JEOL, Japan) samples, characterized before and after the irradiation process. Irradiation induced disorder accompanied by stress relief. Furthermore, it was found that there is a dose threshold for disordering of the crystalline matter in the irradiated region. Irradiation at doses equal or higher than this threshold resulted in almost solely disordered phase. Using the program “Stopping and Range of Ions in Matter” (SRIM), the parameters of penetration of Ar ions into the irradiated samples were estimated. Based on these estimations, the dose threshold for ion-induced disordering of the studied material was assessed. View Full-Text
Keywords: U-Al-Si; ion-irradiation; transmission electron microscopy; structural defects; disordering U-Al-Si; ion-irradiation; transmission electron microscopy; structural defects; disordering
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MDPI and ACS Style

Meshi, L.; Yaniv, G.; Horak, P.; Vacik, J.; Mykytenko, N.; Rafailov, G.; Dahan, I.; Fuks, D.; Kiv, A. Radiation Resistance of the U(Al, Si)3 Alloy: Ion-Induced Disordering. Materials 2018, 11, 228.

AMA Style

Meshi L, Yaniv G, Horak P, Vacik J, Mykytenko N, Rafailov G, Dahan I, Fuks D, Kiv A. Radiation Resistance of the U(Al, Si)3 Alloy: Ion-Induced Disordering. Materials. 2018; 11(2):228.

Chicago/Turabian Style

Meshi, Louisa, Gili Yaniv, Pavel Horak, Jiri Vacik, Natalia Mykytenko, Gennady Rafailov, Itzchak Dahan, David Fuks, and Arik Kiv. 2018. "Radiation Resistance of the U(Al, Si)3 Alloy: Ion-Induced Disordering" Materials 11, no. 2: 228.

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