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Materials 2018, 11(12), 2480; https://doi.org/10.3390/ma11122480

Highly Conductive and Transparent AZO Films Fabricated by PLD as Source/Drain Electrodes for TFTs

1
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
2
State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China
3
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
4
Shenzhen Costar Technologies Co., Ltd., Shenzhen 518000, China
*
Authors to whom correspondence should be addressed.
Received: 19 October 2018 / Revised: 21 November 2018 / Accepted: 1 December 2018 / Published: 6 December 2018
(This article belongs to the Section Thin Films)
Full-Text   |   PDF [2768 KB, uploaded 6 December 2018]   |  

Abstract

Aluminum-doped ZnO (AZO) has huge prospects in the field of conductive electrodes, due to its low price, high transparency, and pro-environment. However, enhancing the conductivity of AZO and realizing ohmic contact between the semiconductor and AZO source/drain (S/D) electrodes without thermal annealing remains a challenge. Here, an approach called pulsed laser deposition (PLD) is reported to improve the comprehensive quality of AZO films due to the high energy of the laser and non-existence of the ion damage. The 80-nm-thick AZO S/D electrodes show remarkable optical properties (transparency: 90.43%, optical band gap: 3.42 eV), good electrical properties (resistivity: 16 × 10−4 Ω·cm, hall mobility: 3.47 cm2/V·s, carrier concentration: 9.77 × 1020 cm−3), and superior surface roughness (Rq = 1.15 nm with scanning area of 5 × 5 μm2). More significantly, their corresponding thin film transistor (TFT) with low contact resistance (RSD = 0.3 MΩ) exhibits excellent performance with a saturation mobility (µsat) of 8.59 cm2/V·s, an Ion/Ioff ratio of 4.13 × 106, a subthreshold swing (SS) of 0.435 V/decade, as well as good stability under PBS/NBS. Furthermore, the average transparency of the unpatterned multi-films composing this transparent TFT can reach 78.5%. The fabrication of this TFT can be suitably transferred to transparent arrays or flexible substrates, which is in line with the trend of display development. View Full-Text
Keywords: AZO; PLD; TFT; transparency; source/drain electrodes AZO; PLD; TFT; transparency; source/drain electrodes
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Zhang, H.; Li, X.; Fang, Z.; Yao, R.; Zhang, X.; Deng, Y.; Lu, X.; Tao, H.; Ning, H.; Peng, J. Highly Conductive and Transparent AZO Films Fabricated by PLD as Source/Drain Electrodes for TFTs. Materials 2018, 11, 2480.

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