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Radek M, Liedke B, Schmidt B, Voelskow M, Bischoff L, Hansen JL, Larsen AN, Bougeard D, Böttger R, Prucnal S, et al. Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures. Materials. 2017; 10(7):813. https://doi.org/10.3390/ma10070813

Radek, Manuel, Bartosz Liedke, Bernd Schmidt, Matthias Voelskow, Lothar Bischoff, John Lundsgaard Hansen, Arne Nylandsted Larsen, Dominique Bougeard, Roman Böttger, Slawomir Prucnal, and et al. 2017. "Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures" Materials 10, no. 7: 813. https://doi.org/10.3390/ma10070813

Radek, M., Liedke, B., Schmidt, B., Voelskow, M., Bischoff, L., Hansen, J. L., Larsen, A. N., Bougeard, D., Böttger, R., Prucnal, S., Posselt, M., & Bracht, H. (2017). Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures. Materials, 10(7), 813. https://doi.org/10.3390/ma10070813