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Open AccessArticle

Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering

Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY 12203, USA
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Academic Editor: Dirk Poelman
Materials 2017, 10(4), 446; https://doi.org/10.3390/ma10040446
Received: 3 March 2017 / Revised: 1 April 2017 / Accepted: 18 April 2017 / Published: 23 April 2017
The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiCxOy) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD), and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments were carried out using oxygen, nitrogen, and forming gas (FG, 5% H2, 95% N2) ambients, modifying the observed white light emission. The observed white luminescence was found to be inversely related to the carbonyl (C=O) bond density present in the films. The peak-to-peak PL was enhanced ~18 and ~17 times for, respectively, the two SiCxOy matrices, oxygen-rich and carbon-rich SiCxOy, via post-deposition passivations. Through a combinational and systematic Fourier transform infrared spectroscopy (FTIR) and PL study, it was revealed that proper tailoring of the passivations reduces the carbonyl bond density by a factor of ~2.2, corresponding to a PL enhancement of ~50 times. Furthermore, the temperature-dependent and temperature-dependent time resolved PL (TDPL and TD-TRPL) behaviors of the nitrogen and forming gas passivated SiCxOy thin films were investigated to acquire further insight into the ramifications of the passivation on the carbonyl/dangling bond density and PL yield. View Full-Text
Keywords: luminescent materials; nanowires; luminescence; spectroscopy; characterization; advanced techniques luminescent materials; nanowires; luminescence; spectroscopy; characterization; advanced techniques
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MDPI and ACS Style

Ford, B.; Tabassum, N.; Nikas, V.; Gallis, S. Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering. Materials 2017, 10, 446.

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