Next Article in Journal
Tunable Luminescence in Sr2MgSi2O7:Tb3+, Eu3+Phosphors Based on Energy Transfer
Next Article in Special Issue
The Effect of Heat Treatment on the Sensitized Corrosion of the 5383-H116 Al-Mg Alloy
Previous Article in Journal
Acceleration of Intended Pozzolanic Reaction under Initial Thermal Treatment for Developing Cementless Fly Ash Based Mortar
Previous Article in Special Issue
Self-Healing Materials for Ecotribology
Article Menu
Issue 3 (March) cover image

Export Article

Open AccessArticle

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode

Department of Electrical Engineering, Kun-Shan University, Tainan 710, Taiwan
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
Department of Electronic Engineering, Kao Yuan University, Kaohsiung 82151, Taiwan
Author to whom correspondence should be addressed.
Academic Editor: Te-Hua Fang
Materials 2017, 10(3), 226;
Received: 6 January 2017 / Revised: 10 February 2017 / Accepted: 20 February 2017 / Published: 24 February 2017
(This article belongs to the Special Issue Selected Material Related Papers from ICI2016)
PDF [4322 KB, uploaded 24 February 2017]


We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films. View Full-Text
Keywords: amorphous IGZO; Ag; triple-layer structures; transmittance; electrical conductivity amorphous IGZO; Ag; triple-layer structures; transmittance; electrical conductivity

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Chen, K.-N.; Yang, C.-F.; Wu, C.-C.; Chen, Y.-H. Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode. Materials 2017, 10, 226.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top