Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films
Abstract
:1. Introduction
2. Materials and Methods
2.1. Thin Film Preparation and UV Photodetector Fabrication
2.2. Property Characterization
3. Results and Discussion
3.1. Structural Features, Optical and Electrical Properties of Oxide Thin Films
3.2. UV Sensing and Photoswitching Studies of Photodetectors
4. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Thin Film Sample | Average Crystallite Size (nm) | Root Mean Square (RMS) Roughness (nm) | Average Transmittance (%) a | Average Reflectance (%) b | Mean Electron Concentration (cm−3) | Mean Hall Mobility (cm2/Vs) | Mean Resistivity (Ω-cm) |
---|---|---|---|---|---|---|---|
ZnO | 26.1 | 5.13 | 88.6 | 12.8 | 1.84 × 1014 | 4.76 | 7.71 × 103 |
AZO | 16.2 | 2.86 | 91.6 | 9.55 | 2.52 × 1015 | 6.09 | 4.14 × 102 |
GZO | 22.5 | 3.08 | 91.4 | 9.75 | 5.09 × 1015 | 11.0 | 1.22 × 102 |
Sensing Layer | UV Response (IUVA/Idark) | Photoconductivity Gain (Ion/Ioff) | Sensitivity (%) | Photocutrrent Responsivity (A/W) |
---|---|---|---|---|
ZnO | 15.3 | 67.0 | 66.0 | 12.0 |
AZO | 35.5 | 28.7 | 27.7 | 28.0 |
GZO | 73.3 | 51.8 | 50.8 | 46.2 |
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Tsay, C.-Y.; Hsu, W.-T. Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films. Materials 2017, 10, 1379. https://doi.org/10.3390/ma10121379
Tsay C-Y, Hsu W-T. Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films. Materials. 2017; 10(12):1379. https://doi.org/10.3390/ma10121379
Chicago/Turabian StyleTsay, Chien-Yie, and Wei-Tse Hsu. 2017. "Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films" Materials 10, no. 12: 1379. https://doi.org/10.3390/ma10121379