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Journal: Energies, 2023
Volume: 16
Number: 5447
5447
Article: Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation
Authors: by Vishwajeet Maurya, Julien Buckley, Daniel Alquier, Mohamed-Reda Irekti, Helge Haas, Matthew Charles, Marie-Anne Jaud and Veronique Sousa
Link: https://www.mdpi.com/1996-1073/16/14/5447

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