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Journal: Energies, 2022
Volume: 15
Number: 677
677
Article: Analytic Model of Threshold Voltage (V_TH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress
Authors: by René Escoffier, Blend Mohamad, Julien Buckley, Romain Gwoziecki, Jérome Biscarrat, Véronique Sousa, Marc Orsatelli, Emmanuel Marcault, Julien Ranc, Roberto Modica and Ferdinando Iucolano
Link: https://www.mdpi.com/1996-1073/15/3/677

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