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Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
 
 

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Journal: Energies, 2021
Volume: 14
Number: 8582

Article: A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Authors: by Jongwoon Yoon, Jaeyeop Na and Kwangsoo Kim
Link: https://www.mdpi.com/1996-1073/14/24/8582

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