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Journal: Energies, 2021
Volume: 14
Number: 7305
Article:
Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
Authors:
by
Kyuhyun Cha and Kwangsoo Kim
Link:
https://www.mdpi.com/1996-1073/14/21/7305
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