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Article

Wideband Modeling of DC-DC Buck Converter with GaN Transistors

by 1,*,†, 1,2,† and 1,†
1
Faculty of Electrical and Control Engineering, Gdańsk University of Technology, str. Gabriela Narutowicza 11/12, 80-233 Gdańsk, Poland
2
CNRS, Grenoble INP, G2Elab, University Grenoble Alpes, F-38000 Grenoble, France
*
Author to whom correspondence should be addressed.
All authors contributed equally.
Academic Editor: Ramkrishan Maheshwari
Energies 2021, 14(15), 4430; https://doi.org/10.3390/en14154430
Received: 2 July 2021 / Revised: 16 July 2021 / Accepted: 18 July 2021 / Published: 22 July 2021
(This article belongs to the Special Issue Control and Modeling of Power Converters and Inverters)
The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in [email protected] simulation software and measurements are compared. Next, the model of the converter is reduced to obtain one lumped inductance of the input filter PCB for the analytical prediction of transistor turn-off ringing frequency and overvoltage. The practical use of the model is presented for sizing optimal capacitance of snubber. View Full-Text
Keywords: wideband modeling; converter modeling; DC-DC converter; GaN HEMT; PEEC wideband modeling; converter modeling; DC-DC converter; GaN HEMT; PEEC
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MDPI and ACS Style

Musznicki, P.; Derkacz, P.B.; Chrzan, P.J. Wideband Modeling of DC-DC Buck Converter with GaN Transistors. Energies 2021, 14, 4430. https://doi.org/10.3390/en14154430

AMA Style

Musznicki P, Derkacz PB, Chrzan PJ. Wideband Modeling of DC-DC Buck Converter with GaN Transistors. Energies. 2021; 14(15):4430. https://doi.org/10.3390/en14154430

Chicago/Turabian Style

Musznicki, Piotr, Pawel B. Derkacz, and Piotr J. Chrzan 2021. "Wideband Modeling of DC-DC Buck Converter with GaN Transistors" Energies 14, no. 15: 4430. https://doi.org/10.3390/en14154430

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