Next Article in Journal
Energy Conservation Potential of Economizer Controls Using Optimal Outdoor Air Fraction Based on Field Study
Previous Article in Journal
Thermal Performances Investigation of Anti-Gravity Heat Pipe with Tapering Phase-Change Chamber
Previous Article in Special Issue
Density Functional Theory-Based Molecular Modeling: Verification of Decisive Roles of Van der Waals Aggregation of Triiodide Ions for Effective Electron Transfer in Wet-Type N3-Dye-Sensitized Solar Cells
Article

Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods

1
Department of Functional Materials Science, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
2
Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
3
Department of General Systems Studies, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
*
Authors to whom correspondence should be addressed.
Energies 2020, 13(19), 5037; https://doi.org/10.3390/en13195037
Received: 18 August 2020 / Revised: 18 September 2020 / Accepted: 21 September 2020 / Published: 24 September 2020
(This article belongs to the Special Issue Advanced Dye-Sensitized Solar Cells)
We constructed ZnO/PbS quantum dot (QD) heterojunction solar cells using liquid-phase ligand exchange methods. Colloidal QD solutions deposited on ZnO-dense layers were treated at different temperatures to systematically study how thermal annealing temperature affected carrier transport properties. The surface of the layers became dense and smooth as the temperature approached approximately 80 °C. The morphology of layers became rough for higher temperatures, causing large grain-forming PbS QD aggregation. The number of defect states in the layers indicated a valley-shaped profile with a minimum of 80 °C. This temperature dependence was closely related to the amount of residual n-butylamine complexes in the PbS QD layers and the active layer morphology. The resulting carrier diffusion length obtained on the active layers treated at 80 °C reached approximately 430 nm. The solar cells with a 430-nm-thick active layer produced a power conversion efficiency (PCE) of 11.3%. An even higher PCE is expected in solar cells fabricated under optimal annealing conditions. View Full-Text
Keywords: PbS quantum dot; solar cells; annealing temperatures; carrier transportation; liquid-phase ligand-exchange PbS quantum dot; solar cells; annealing temperatures; carrier transportation; liquid-phase ligand-exchange
Show Figures

Graphical abstract

MDPI and ACS Style

Takahashi, A.; Wang, H.; Fukuda, T.; Kamata, N.; Kubo, T.; Segawa, H. Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods. Energies 2020, 13, 5037. https://doi.org/10.3390/en13195037

AMA Style

Takahashi A, Wang H, Fukuda T, Kamata N, Kubo T, Segawa H. Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods. Energies. 2020; 13(19):5037. https://doi.org/10.3390/en13195037

Chicago/Turabian Style

Takahashi, Akihiro, Haibin Wang, Takeshi Fukuda, Norihiko Kamata, Takaya Kubo, and Hiroshi Segawa. 2020. "Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods" Energies 13, no. 19: 5037. https://doi.org/10.3390/en13195037

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop