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Open AccessArticle

Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

School of Automation, Northwestern Polytechnical University, Xi’an 710000, China
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Energies 2018, 11(11), 3111; https://doi.org/10.3390/en11113111
Received: 13 October 2018 / Revised: 7 November 2018 / Accepted: 9 November 2018 / Published: 10 November 2018
(This article belongs to the Special Issue Power Electronics 2018)
The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density. However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of SiC MOSFET which causes a crow-bar current thereby increasing switching losses. In order to increase the immunity against the crosstalk phenomenon in a half-bridge configuration, this paper presents a gate driver for SiC MOSFET capable of generating the negative turn-off voltage without using a negative power supply. In addition, the effect of parasitic inductances on the switching response is analyzed and an RC snubber is designed using high-frequency based circuit reduction technique to dampen the switching ringing. The performance of the proposed gate driver and the designed RC snubber is validated using simulation and experiment at the 1 MHz switching frequency. The results show that the proposed gate driver with RC snubber eliminates crosstalk by maintaining any spurious gate spike below the gate threshold voltage. View Full-Text
Keywords: SiC MOSFET; parasitic inductance; RC snubber; half-bridge converter SiC MOSFET; parasitic inductance; RC snubber; half-bridge converter
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MDPI and ACS Style

Zaman, H.; Wu, X.; Zheng, X.; Khan, S.; Ali, H. Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter. Energies 2018, 11, 3111.

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