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Energies 2018, 11(11), 3111; https://doi.org/10.3390/en11113111

Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

School of Automation, Northwestern Polytechnical University, Xi’an 710000, China
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Received: 13 October 2018 / Revised: 7 November 2018 / Accepted: 9 November 2018 / Published: 10 November 2018
(This article belongs to the Special Issue Power Electronics 2018)
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Abstract

The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density. However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of SiC MOSFET which causes a crow-bar current thereby increasing switching losses. In order to increase the immunity against the crosstalk phenomenon in a half-bridge configuration, this paper presents a gate driver for SiC MOSFET capable of generating the negative turn-off voltage without using a negative power supply. In addition, the effect of parasitic inductances on the switching response is analyzed and an RC snubber is designed using high-frequency based circuit reduction technique to dampen the switching ringing. The performance of the proposed gate driver and the designed RC snubber is validated using simulation and experiment at the 1 MHz switching frequency. The results show that the proposed gate driver with RC snubber eliminates crosstalk by maintaining any spurious gate spike below the gate threshold voltage. View Full-Text
Keywords: SiC MOSFET; parasitic inductance; RC snubber; half-bridge converter SiC MOSFET; parasitic inductance; RC snubber; half-bridge converter
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Zaman, H.; Wu, X.; Zheng, X.; Khan, S.; Ali, H. Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter. Energies 2018, 11, 3111.

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