Next Article in Journal
Nuclear Magnetic Resonance Measurement of Oil and Water Distributions in Spontaneous Imbibition Process in Tight Oil Reservoirs
Previous Article in Journal
A Novel Method for Economic Dispatch of Combined Heat and Power Generation
Previous Article in Special Issue
DC-link Ripple Reduction in a DPWM-Based Two-Level VSI
Article Menu

Export Article

Open AccessArticle
Energies 2018, 11(11), 3111;

Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

School of Automation, Northwestern Polytechnical University, Xi’an 710000, China
Authors to whom correspondence should be addressed.
Received: 13 October 2018 / Revised: 7 November 2018 / Accepted: 9 November 2018 / Published: 10 November 2018
(This article belongs to the Special Issue Power Electronics 2018)
Full-Text   |   PDF [5861 KB, uploaded 13 November 2018]   |  


The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density. However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of SiC MOSFET which causes a crow-bar current thereby increasing switching losses. In order to increase the immunity against the crosstalk phenomenon in a half-bridge configuration, this paper presents a gate driver for SiC MOSFET capable of generating the negative turn-off voltage without using a negative power supply. In addition, the effect of parasitic inductances on the switching response is analyzed and an RC snubber is designed using high-frequency based circuit reduction technique to dampen the switching ringing. The performance of the proposed gate driver and the designed RC snubber is validated using simulation and experiment at the 1 MHz switching frequency. The results show that the proposed gate driver with RC snubber eliminates crosstalk by maintaining any spurious gate spike below the gate threshold voltage. View Full-Text
Keywords: SiC MOSFET; parasitic inductance; RC snubber; half-bridge converter SiC MOSFET; parasitic inductance; RC snubber; half-bridge converter

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Zaman, H.; Wu, X.; Zheng, X.; Khan, S.; Ali, H. Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter. Energies 2018, 11, 3111.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Energies EISSN 1996-1073 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top