Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter
AbstractThe silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density. However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of SiC MOSFET which causes a crow-bar current thereby increasing switching losses. In order to increase the immunity against the crosstalk phenomenon in a half-bridge configuration, this paper presents a gate driver for SiC MOSFET capable of generating the negative turn-off voltage without using a negative power supply. In addition, the effect of parasitic inductances on the switching response is analyzed and an RC snubber is designed using high-frequency based circuit reduction technique to dampen the switching ringing. The performance of the proposed gate driver and the designed RC snubber is validated using simulation and experiment at the 1 MHz switching frequency. The results show that the proposed gate driver with RC snubber eliminates crosstalk by maintaining any spurious gate spike below the gate threshold voltage. View Full-Text
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Zaman, H.; Wu, X.; Zheng, X.; Khan, S.; Ali, H. Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter. Energies 2018, 11, 3111.
Zaman H, Wu X, Zheng X, Khan S, Ali H. Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter. Energies. 2018; 11(11):3111.Chicago/Turabian Style
Zaman, Haider; Wu, Xiaohua; Zheng, Xiancheng; Khan, Shahbaz; Ali, Husan. 2018. "Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter." Energies 11, no. 11: 3111.
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