Next Article in Journal
Techniques for Reduction of the Cogging Torque in Claw Pole Machines with SMC Cores
Previous Article in Journal
Research on Risk Evaluation of Transnational Power Networking Projects Based on the Matter-Element Extension Theory and Granular Computing
Previous Article in Special Issue
Transverse Thermoelectricity in Fibrous Composite Materials
Article Menu
Issue 10 (October) cover image

Export Article

Open AccessArticle
Energies 2017, 10(10), 1524;

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
Author to whom correspondence should be addressed.
Received: 1 September 2017 / Revised: 17 September 2017 / Accepted: 26 September 2017 / Published: 6 October 2017
(This article belongs to the Special Issue Thermoelectric Materials for Energy Conversion)
Full-Text   |   PDF [5101 KB, uploaded 6 October 2017]   |  


In this study, the p-type Ga-doped Cu3Sb1−xGaxSe4 compounds were fabricated by melting, annealing, grinding, and spark plasma sintering (SPS). The transport properties of Ga-doped Cu3Sb1−xGaxSe4 compounds were investigated. As Ga content increased, the hole concentration of Cu3Sb1−xGaxSe4 compounds increased, which led to an increase in electrical conductivity. Meanwhile, the Seebeck coefficient of the Cu3Sb1−xGaxSe4 compounds decreased as Ga content increased. The extra phonon scattering originating from Ga-doping effectively depressed the lattice thermal conductivity of the Cu3Sb1−xGaxSe4 compounds. The ZT value of Cu3SbSe4 markedly improved, which is primarily ascribed to the depressed lattice thermal conductivity and the increased electrical conductivity. The highest ZT value for the Cu3Sb0.985Ga0.015Se4 compound was 0.54 at 650 K, which is two times higher than that of a pure Cu3SbSe4 compound. View Full-Text
Keywords: thermoelectric; Cu3SbSe4; gallium doping; spark plasma sintering thermoelectric; Cu3SbSe4; gallium doping; spark plasma sintering

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Zhao, D.; Wu, D.; Bo, L. Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping. Energies 2017, 10, 1524.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Energies EISSN 1996-1073 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top