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Open AccessArticle

Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Institut de Microtechnique (IMT), University of Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
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Sensors 2008, 8(8), 4656-4668; https://doi.org/10.3390/s8084656
Received: 8 July 2008 / Revised: 5 August 2008 / Accepted: 6 August 2008 / Published: 8 August 2008
(This article belongs to the Special Issue State-of-the-Art Sensors Technology in Switzerland)
Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode. View Full-Text
Keywords: Image sensor; monolithic integration; amorphous silicon Image sensor; monolithic integration; amorphous silicon
MDPI and ACS Style

Wyrsch, N.; Choong, G.; Miazza, C.; Ballif, C. Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors. Sensors 2008, 8, 4656-4668.

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