Next Article in Journal
Antibody Fragments as Probe in Biosensor Development
Next Article in Special Issue
The Improved Dual-view Field Goniometer System FIGOS
Previous Article in Journal
Single Photon Avalanche Diodes: Towards the Large Bidimensional Arrays
Previous Article in Special Issue
Textile Pressure Sensor Made of Flexible Plastic Optical Fibers
Article Menu

Export Article

Open AccessArticle
Sensors 2008, 8(8), 4656-4668;

Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Institut de Microtechnique (IMT), University of Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
Author to whom correspondence should be addressed.
Received: 8 July 2008 / Revised: 5 August 2008 / Accepted: 6 August 2008 / Published: 8 August 2008
(This article belongs to the Special Issue State-of-the-Art Sensors Technology in Switzerland)
Full-Text   |   PDF [292 KB, uploaded 21 June 2014]


Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode. View Full-Text
Keywords: Image sensor; monolithic integration; amorphous silicon Image sensor; monolithic integration; amorphous silicon
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Share & Cite This Article

MDPI and ACS Style

Wyrsch, N.; Choong, G.; Miazza, C.; Ballif, C. Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors. Sensors 2008, 8, 4656-4668.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top