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Sensors 2005, 5(12), 594-603;

Photo-Induced Unpinning of Fermi Level in WO3

Department of Physics University of Ferrara, Via Saragat 1c, 44100 Ferrara, Italy
INFN Section of Ferrara, Italy
Chemistry and Physics Department, Brescia, Italy
University of Wales Swansea, Swansea, UK
Author to whom correspondence should be addressed.
Received: 6 October 2005 / Accepted: 19 December 2005 / Published: 20 December 2005
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Atomic force and high resolution scanning tunneling analyses were carried out onnanostructured WO3 films. It turned out that the band gap measured by scanning tunnelingspectroscopy at surface is lower than the band gap reported in the literature. This effect isattributed to the high density of surface states in this material, which allows tunneling intothese states. Such a high density of surface states pins the Fermi level resulting in modestsurface activity at room temperature. Photo activation of WO3 results in unpinning of theFermi level and thereby in higher chemical activity at surface. View Full-Text
Keywords: Scanning tunneling spectroscopy; pinning of Fermi level; chemoresistivity. Scanning tunneling spectroscopy; pinning of Fermi level; chemoresistivity.
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Malagù, C.; Carotta, M.C.; Comini, E.; Faglia, G.; Giberti, A.; Guidi, V.; Maffeis, T.G.; Martinelli, G.; Sberveglieri, G.; Wilks, S.P. Photo-Induced Unpinning of Fermi Level in WO3. Sensors 2005, 5, 594-603.

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