Advances in Photonic Gas Sensors Operating in the VIS–NIR Spectrum: Structures, Materials, and Performance
Abstract
1. Introduction
2. Fundamentals of Photonic Gas Sensing
2.1. Key Sensing Parameters
2.2. Refractive Index (RI) Sensing
2.2.1. Spectral Shift
2.2.2. Phase Shift
2.3. Optical Absorption Sensing
2.4. Mechanical and Thermal Sensing
3. Material Platforms for Integrated Photonic Gas Sensing
3.1. Silicon-on-Insulator (SOI)
3.2. Silicon Nitride (Si3N4)
3.3. InP and III–V Semiconductors
3.4. Hybrid Platforms: Graphene and 2D Materials
3.5. Plasmonics: Surface Plasmon Resonance Platforms
3.6. Lithium Niobate (LN)
3.7. Polymers
3.8. Chalcogenide Glasses (As2S3)
3.9. Summary of Material Platforms
4. Photonic Gas Sensor Structures
4.1. Waveguide-Based Photonic Gas Sensors
4.1.1. Silicon-Based Platforms (SOI)
4.1.2. Silicon Nitride (Si3N4)
4.1.3. Chalcogenide Glass
4.1.4. Lithium Niobate (LN)
4.1.5. Polymer and Organic Material
4.1.6. Hybrid Platforms: Graphene and 2D Materials Integration
4.2. Resonator/Filter-Based Photonic Gas Sensors
4.2.1. Silicon on Insulator
4.2.2. Silicon Nitride (Si3N4)
4.2.3. Polymer and Organic Materials
4.2.4. Dielectric Metasurfaces
4.2.5. Plasmonic Hybrid Structures
4.3. Interferometer-Based Photonic Gas Sensors
4.3.1. Silicon on Insulator
4.3.2. Graphene and 2D Materials
5. Challenges and Future Perspectives
5.1. Challenges and Limitations
5.2. Future Perspectives
6. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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| Material Platform | Refractive Index (n) | Transparency Window | Fabrication Constraints | Advantages | Disadvantages |
|---|---|---|---|---|---|
| Silicon-on-Insulator (SOI) | 3.45 | NIR (esp. 1.3–1.6 µm) | Mature CMOS-compatible fabrication | High index contrast for optical confinement; low cost; highly scalable | Indirect bandgap renders it highly inefficient for active light emission |
| Silicon Nitride (Si3N4) | Lower than Silicon | VIS to shortwave MIR (≈6.7 µm) | CMOS-compatible | Ultra-low propagation losses; excellent thermal stability; broad transparency | Lower refractive index contrast compared to pure silicon |
| InP and III–V Semiconductors | Material dependent | VIS to MIR | Complex integration with silicon | Direct bandgap enables highly efficient active light emission | Extremely difficult to mount/integrate seamlessly onto passive silicon chips |
| Hybrid platforms (Graphene and 2D Materials) | Variable (Modulated via charge transfer) | VIS to NIR | Requires physical transfer onto bulk waveguides | Exceptional surface-to-volume ratio; extreme sensitivity to surface perturbations | Zero intrinsic bandgap (graphene); rapid environmental degradation without passivation |
| Plasmonics (Au, Ag, Al) | Variable (Metal/Dielectric interface) | VIS to NIR | Requires precise nanoscale patterning | Generates strong, highly localized electromagnetic fields; enhances light-matter interaction | Certain metals lack long-term chemical stability |
| Lithium Niobate (LN) | Modulated via applied electric field | Ultraviolet to MIR | Scalable, high-quality thin-film fabrication | Strong Pockels electro-optic effect for ultra-fast modulation; exceptional thermal/mechanical stability | High fabrication complexity for thin-film LNOI architectures |
| Polymers (PMMA, SU-8) | ≈1.48 (PMMA) to 1.57 (SU-8) | VIS to NIR | Low-temperature spin-coating, hot embossing, and nanoimprinting | Extremely low cost; highly flexible; easy to integrate with functional chemical coatings | Inherently lower optical confinement, often requiring hybrid integration to match silicon |
| Chalcogenide Glasses (As2S3) | 2.4 | VIS to >10 µm (Deep MIR) | Can be deposited at low temperatures without requiring lattice matching to CMOS chips | Large third-order nonlinearity; excellent broadband MIR transparency | Requires highly optimized etching processes to minimize propagation losses |
| Device Architecture | Fundamental Physics | Advantages | Disadvantages | Footprint and Complexity | Limiting Factors |
|---|---|---|---|---|---|
| Waveguide-Based (e.g., Slot, SWG) | Evanescent Field: Gas interacts with the mode’s tail, altering absorption or refractive index |
|
|
| Propagation and scattering losses |
| Resonator/Filter (e.g., Microrings) | Resonance Shift: Gas adsorption changes the optical cavity, shifting the resonant wavelength |
|
|
| Sidewall roughness |
| Interferometer (e.g., MZI) | Phase Shift: Refractive index changes in the sensing arm induce a measurable phase difference |
|
|
| Mechanical vibrations and physical stress |
| Ref. No. | Material Platform | Device Architecture | Sensing Gas | Sensitivity | Standardized LoD |
|---|---|---|---|---|---|
| [111] | SOI | Slotted Bragg grating waveguide | CO2 | 14.4 pm/ppm | Not specified (Simulated down to 215 ppm) |
| [113] | Slot and strip waveguide | Different gases | 1320 nm/RIU | Not specified (Reports FOM of 641 RIU−1) | |
| [46] | Chalcogenide Glass | Waveguide | CH4 | N/A | 23 ppm |
| [116] | Lithium Niobate (LN) | Rib waveguide | CO2 | High | 870 ppm |
| [96] | PMMA with a ZIF-8 (MOF) coating | Ridge Waveguide | CO2 | N/A | 50 × 103 ppm |
| [120] | Graphene | Waveguide | NO2 | High | 0.15 ppm |
| [134] | SOI | Microring | CO2 | 0.9 pm/ppm | 700 ppm |
| [130] | Racetrack Ring Resonator | Different gases | 116.3 nm/RIU to 143.3 nm/RIU | Not specified (Max Q-factor: 7701) | |
| [132] | All-polymer (SU-8) | Whispering Gallery Mode (WGM) Microdisk Resonator | Pentanoic Acid (and other VOCs) | 23 pm/ppm | 0.6 ppm |
| [16] | Metasurface (Silicon nanocylinders on a gold layer) | Metasurface-based perfect absorber microdisks | CO2 | 17.3 pm/ppm | 215 ppm |
| [38] | SOI | Loop-terminated Mach–Zehnder Interferometer (LT-MZI) | Different gases | 1070 nm/RIU | Not specified (Reports FOM of 280.8 RIU−1) |
| [41] | Graphene Oxide (GO) | MZI with a hybrid MMF-TCF-MMF structure | NH3 | 4.97 pm/ppm | 151 ppm |
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Rasheed, N.; Li, X.; Bakr, M. Advances in Photonic Gas Sensors Operating in the VIS–NIR Spectrum: Structures, Materials, and Performance. Sensors 2026, 26, 1568. https://doi.org/10.3390/s26051568
Rasheed N, Li X, Bakr M. Advances in Photonic Gas Sensors Operating in the VIS–NIR Spectrum: Structures, Materials, and Performance. Sensors. 2026; 26(5):1568. https://doi.org/10.3390/s26051568
Chicago/Turabian StyleRasheed, Nourhan, Xun Li, and Mohamed Bakr. 2026. "Advances in Photonic Gas Sensors Operating in the VIS–NIR Spectrum: Structures, Materials, and Performance" Sensors 26, no. 5: 1568. https://doi.org/10.3390/s26051568
APA StyleRasheed, N., Li, X., & Bakr, M. (2026). Advances in Photonic Gas Sensors Operating in the VIS–NIR Spectrum: Structures, Materials, and Performance. Sensors, 26(5), 1568. https://doi.org/10.3390/s26051568

