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Article

Tunable Narrow-Linewidth Si3N4 External-Cavity Semiconductor Laser Based on an Asymmetric Bezier Triple-Ring Resonator

1
State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, China
2
School of Future Information Science and Technology, Fudan University, Shanghai 200433, China
3
China Mobile Jiangsu Company Limited, Nanjing 210029, China
4
IEIT Systems (Beijing) Co., Ltd., Beijing 100095, China
*
Author to whom correspondence should be addressed.
Sensors 2026, 26(13), 4070; https://doi.org/10.3390/s26134070 (registering DOI)
Submission received: 20 April 2026 / Revised: 13 June 2026 / Accepted: 24 June 2026 / Published: 26 June 2026

Abstract

This paper presents an AI-assisted design of a tunable narrow-linewidth external cavity laser based on an asymmetric Bezier cascaded triple-ring resonator. To address the high bending loss, limited quality factor, and footprint–loss trade-off in conventional external cavity ring resonators, asymmetric Bezier waveguide bends are introduced and optimized using particle swarm optimization, enabling smoother mode evolution and reducing bend loss. On this basis, this paper constructs a triple-ring-coupled external cavity structure to further enhance the mode-selection capability and filtering performance of the resonant cavity. Simulation results indicate that the asymmetric Bezier resonator optimized using particle swarm optimization can effectively reduce cavity loss and improve the resonator quality factor while maintaining a compact device footprint. Theoretical analysis indicates that the designed laser based on the proposed external cavity can achieve a linewidth of approximately 390 Hz. This work provides a feasible approach for designing high-performance, low-loss, and narrow-linewidth-integrated lasers, and is of significance for the development of integrated photonic laser sources.
Keywords: external cavity; asymmetric Bezier bend waveguide; ring; narrow linewidth external cavity; asymmetric Bezier bend waveguide; ring; narrow linewidth

Share and Cite

MDPI and ACS Style

Wang, T.; Hu, Y.; Zhou, W.; Wang, Y.; Xin, X. Tunable Narrow-Linewidth Si3N4 External-Cavity Semiconductor Laser Based on an Asymmetric Bezier Triple-Ring Resonator. Sensors 2026, 26, 4070. https://doi.org/10.3390/s26134070

AMA Style

Wang T, Hu Y, Zhou W, Wang Y, Xin X. Tunable Narrow-Linewidth Si3N4 External-Cavity Semiconductor Laser Based on an Asymmetric Bezier Triple-Ring Resonator. Sensors. 2026; 26(13):4070. https://doi.org/10.3390/s26134070

Chicago/Turabian Style

Wang, Tong, Yuchen Hu, Wen Zhou, Ye Wang, and Xiangjun Xin. 2026. "Tunable Narrow-Linewidth Si3N4 External-Cavity Semiconductor Laser Based on an Asymmetric Bezier Triple-Ring Resonator" Sensors 26, no. 13: 4070. https://doi.org/10.3390/s26134070

APA Style

Wang, T., Hu, Y., Zhou, W., Wang, Y., & Xin, X. (2026). Tunable Narrow-Linewidth Si3N4 External-Cavity Semiconductor Laser Based on an Asymmetric Bezier Triple-Ring Resonator. Sensors, 26(13), 4070. https://doi.org/10.3390/s26134070

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